Перегляд за автором "Radchenko, V.I."

Сортувати за: Порядок: Результатів:

  • A pulse transformer for a 10 MW klystron power supply 
    Bak, P.A.; Kazarezov, I.V.; Kobets, V.V.; Korepanov, A.A.; Krainov, G.S.; Radchenko, V.I.; Severilo, V.S.; Tuvik, A.A. (Вопросы атомной науки и техники, 2001)
    The design and test results of the Pulse Transformer (PT) for the klystron with a voltage of 120 kV, klystron current of 130 A and a pulse duration of 1.4 ms is presented. The PT design was realized with taking into account ...
  • Deposition of nanocrystalline silicon films into low frequency induction RF discharge 
    Deryzemlia, A.M.; Kryshtal, P.G.; Malykhin, D.G.; Radchenko, V.I.; Shirokov, B.M. (Вопросы атомной науки и техники, 2014)
    Results of experiments on obtaining nanocrystalline silicon films with the method of stimulated plasma-enhanced chemical vapor deposition (PECVD) into low frequency induction RF discharge (880 kHz) allowed in silicon ...
  • Hydrogen reduction of silicon tetrachloride in low temperature non-equilibrium plasma of induction RF discharge 
    Deryzemlia, A.N.; Yevsiukov, A.I.; Radchenko, V.I.; Khizhnyak, D.A.; Kryshtal, P.G.; Zhuravlov, A.Yu.; Shijan, A.V.; Strigunovskiy, S.V.; Pelypets, Yu.A.; Shirokov, B.M. (Вопросы атомной науки и техники, 2019)
    In this work, silicon is obtained by plasma-chemical reduction of silicon tetrachloride in an argon-hydrogen low- temperature nonequilibrium plasma. It is shown that in the investigated range of process parameters, the ...